NTE2991 mosfet n?channel, enhancement mode high speed switch features: ultra low on?resistance dynamic dv/dt rating +175 c operating temperature fast switching fully avalanche rated absolute maximum ratings: drain current, i d continuous (v gs = 10v) t c = +25 c (note 1) 110a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t c = +100 c 80a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pulsed (note 2) 390a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total power dissipation (t c = +25 c), p d 200w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate above 25 c 1.3w/ c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate?source voltage, v gs 20v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . single pulsed avalanche energy (i as = 62a, l = 138 h, note 3), e as 264mj . . . . . . . . . . . . . . . . . avalanche current (note 2), i ar 62a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . repetitive avalanche energy (note 2), e ar 20mj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak diode recovery dv/dt (note 4), dv/dt 5.0v/ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature range, t j ?55 to +175 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?55 to +175 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . maximum lead temperature (during soldering, 1.6mm from case, 10sec), t l +300 c . . . . . . . . . . maximum thermal resistance: junction?to?case, r thjc 0.75 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . junction?to?ambient, r thja 62 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . typical thermal resistance, case?to?sink (flat, greased surface), r thcs 0.50 c/w . . . . . . . . . . . . note 1. calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. note 2. repetitive rating: pulse width limited by maximum junction temperature. note 3. this is a calculated value limited to t j = +175 c. note 4. i sd 62a, di/dt 207a/ s, v dd v (br)dss , t j +175 c.
electrical characteristics: (t j = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit drain ? source breakdown voltage bv dss v gs = 0v, i d = 250 a 55 ? ? v breakdown voltage temperature coefficient ? v (br)dss / ? t j reference to +25 c, i d = 1ma ? 0.057 ? v/ c static drain ? source on resistance r ds(on) v gs = 10v, i d = 62a, note 5 ? ? 8.0 ? gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 ? 4.0 v forward transconductance g fs v ds = 25v, i d = 62a, note 5 44 ? ? mhos drain ? to ? source leakage current i dss v ds = 55v, v gs = 0 ? ? 25 a v ds = 44v, v gs = 0v, t c = +150 c ? ? 250 a gate ? source leakage forward i gss v gs = 20v ? ? 100 na gate ? source leakage reverse i gss v gs = ? 20v ? ? ? 100 na total gate charge q g v gs = 10v, i d = 62a, v ds = 44v ? ? 146 nc gate ? source charge q gs ? ? 35 nc gate ? drain ( ? miller ? ) charge q gd ? ? 54 nc turn ? on delay time t d(on) v dd = 28v , i d = 62a, r g = 4.5 ? , ? 14 ? ns rise time t r v gs = 10v, note 5 ? 101 ? ns turn ? off delay time t d(off) ? 50 ? ns fall time t f ? 65 ? ns internal drain inductance l d between lead, 6mm (0.25 ? ) from ? 4.5 ? nh internal source inductance l s package and center of die contact ? 7.5 ? nh input capacitance c iss v gs = 0v, v ds = 25v, f = 1mhz ? 3247 ? pf output capacitance c oss ? 781 ? pf reverse transfer capacitance c rss ? 211 ? pf source ? drain diode ratings and characteristics continuous source current i s (body diode) ? ? 110 a pulse source current i sm (body diode) note 2 ? ? 390 a diode forward voltage v sd t j = +25 c, i s = 62a, v gs = 0v, note 5 ? ? 1.3 v reverse recovery time t rr t j = +25 c, i f = 62a, di/dt = 100a/ s, ? 69 104 ns reverse recovery charge q rr note 5 ? 143 215 c forward turn ? on time t on intrinsic turn ? on time is neglegible (turn ? on is dominated by l s + l d ) note 2. repetitive rating: pulse width limited by maximum junction temperature. note 5. pulse width 400 s, duty cycle 2%.
.420 (10.67) max .500 (12.7) max .500 (12.7) min .250 (6.35) max .147 (3.75) dia max .070 (1.78) max .100 (2.54) gate drain/tab source .110 (2.79)
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